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APTGF90DH60T
Asymmetrical - Bridge NPT IGBT Power Module
VBUS VBUS SENSE Q1 G1 CR3
VCES = 600V IC = 90A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Switched Reluctance Motor Drives Features
* Non Punch Through (NPT) THUNDERBOLT IGBT(R)
E1 OUT1 OUT2 Q4 G4 CR2 E4
0/VBU S SENSE
NTC1
0/VBU S
NTC2
* *
VBUS SENSE
G4 E4
OUT2
VBUS
0/VBUS
OUT1
E1 G1
0/VBUS SENSE
NTC2 NTC1
* * Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Easy paralleling due to positive TC of VCEsat * Low profile
- Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C Max ratings 600 110 90 315 20 312 315A @ 600V Unit V
APTGF90DH60T - Rev 1 March 2004
A V W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
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APTGF90DH60T
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, IC = 100A Tj = 25C VGE = 0V VCE = 600V Tj = 125C Tj = 25C VGE =15V IC = 90A Tj = 125C VGE = VCE, IC = 1mA VGE = 20 V, VCE = 0V Min 600 Typ Max 100 1000 2.5 5 150 Unit V A V V nA
2.0 2.2 3
Dynamic Characteristics
Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Eon Eoff Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC = 90A Inductive Switching (25C) VGE = 15V VBus = 400V IC = 90A RG = 5 W Min Typ 4300 470 400 330 290 200 26 25 150 30 3.35 2.85 26 25 170 40 4.3 3.5 Max Unit pF
nC
ns
mJ
Inductive Switching (125C) VGE = 15V VBus = 400V IC = 90A RG = 5 W
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions
50% duty cycle Tc = 80C
Min
Tj = 125C Tj = 25C Tj = 125C
220 390 1450
Qrr
Reverse Recovery Charge
nC
u Eon includes diode reverse recovery v In accordance with JEDEC standard JESD24-1
APT website - http://www.advancedpower.com
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APTGF90DH60T - Rev 1 March 2004
trr
Reverse Recovery Time
IF = 100 A IF = 200 A IF = 100 A IF = 100A VR = 400V di/dt =200A/s IF = 100A VR = 400V di/dt =200A/s
Tj = 125C Tj = 25C
Typ 100 1.6 1.9 1.4 180
Max 1.8
Unit A V
ns
APTGF90DH60T
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque To Heatsink Package Weight IGBT Diode 2500 -40 -40 -40 M5 150 125 100 4.7 160 Min Typ Max 0.3 0.6 Unit C/W V C N.m g
Temperature sensor NTC
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K
RT = R25 T: Thermistor temperature e ae 1 1 ou RT: Thermistor value at T expe B25 / 85 c c T - T /u / e 25 ou e
Min
Typ 68 4080
Max
Unit kW K
Package outline
APT website - http://www.advancedpower.com
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APTGF90DH60T - Rev 1 March 2004
APTGF90DH60T
Typical Performance Curve
Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 300
350 Ic, Collector Current (A) 300 250 200 150 100 50 0 0 1 2 3 VCE, Collector to Emitter Voltage (V)
Transfer Characteristics Tc=125C
Ic, Collector Current (A)
250s Pulse Test < 0.5% Duty cycle
Tc=-55C Tc=25C
250 200 150 100 50 0
250s Pulse Test < 0.5% Duty cycle
Tc=-55C
Tc=25C
Tc=125C
4
0
VCE, Collector to Emitter Voltage (V)
1
2
3
4
300
VGE, Gate to Emitter Voltage (V)
18
250s Pulse Test < 0.5% Duty cycle
Gate Charge IC = 90A TJ = 25C VCE=120V VCE=300V
Ic, Collector Current (A)
250 200 150 100 50 0 0
16 14 12 10 8 6 4 2 0 0
VCE=480V
TJ=25C TJ=125C 1 TJ=-55C 10
23456789 VGE, Gate to Emitter Voltage (V)
50
100 150 200 250 Gate Charge (nC)
300
350
VCE, Collector to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt. 8 7 6 5 4 3 2 1 0 6 10 12 14 VGE, Gate to Emitter Voltage (V) 8 16 Ic=45A Ic=90A
TJ = 25C 250s Pulse Test < 0.5% Duty cycle
VCE, Collector to Emitter Voltage (V)
On state Voltage vs Junction Temperature 4 3.5 3 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (C) DC Collector Current vs Case Temperature Ic=45A
250s Pulse Test < 0.5% Duty cycle VGE = 15V
Ic=180A
Ic=180A
Ic=90A
Breakdown Voltage vs Junction Temp. Collector to Emitter Breakdown Voltage (Normalized) 1.20 1.10 1.00 0.90 0.80 0.70 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (C) Ic, DC Collector Current (A)
160 140 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150
TC, Case Temperature (C)
APT website - http://www.advancedpower.com
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APTGF90DH60T - Rev 1 March 2004
APTGF90DH60T
Turn-On Delay Time vs Collector Current td(on), Turn-On Delay Time (ns) td(off), Turn-Off Delay Time (ns) 35 250 Turn-Off Delay Time vs Collector Current
30 VGE = 15V 25 Tj = 25C VCE = 400V RG = 5 25 50 75 100 125 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 80 VCE = 400V RG = 5 150
200
VGE=15V, TJ=125C
150 VGE=15V, TJ=25C
20
100
VCE = 400V RG = 5 25 50 75
15
50 100 125 150 ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current
80
VCE = 400V, VGE = 15V, RG = 5 tf, Fall Time (ns)
tr, Rise Time (ns)
60
60
TJ = 125C
40
VGE=15V, TJ=125C
40
20
20
TJ = 25C
0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150
0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150
Turn-On Energy Loss vs Collector Current Eoff, Turn-off Energy Loss (mJ) 8 Eon, Turn-On Energy Loss (mJ) VCE = 400V RG = 5 TJ=125C, VGE=15V
Turn-Off Energy Loss vs Collector Current 6 5 4 3 2 1 0 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150 VCE = 400V VGE = 15V RG = 5 TJ = 125C
6
4
TJ=25C, VGE=15V
TJ = 25C
2
0 0 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance 16
Switching Energy Losses vs Junction Temp. 10 Switching Energy Losses (mJ) 8 6 4 2
Eoff, 45A Eon, 90A Eoff, 90A Eon, 45A
VCE = 400V VGE = 15V RG = 5
Switching Energy Losses (mJ)
12
VCE = 400V VGE = 15V TJ = 125C
Eon, 180A
Eoff, 180A
Eon, 180A
Eoff, 90A
Eoff, 180A
8
Eon, 90A Eoff, 45A
4
Eon, 45A
0 0 10 20 30 40 Gate Resistance (Ohms) 50
0 0 25 50 75 100 TJ, Junction Temperature (C) 125
APT website - http://www.advancedpower.com
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APTGF90DH60T - Rev 1 March 2004
APTGF90DH60T
Capacitance vs Collector to Emitter Voltage 10000 IC, Collector Current (A) Cies C, Capacitance (pF) 350 300 250 200 150 100 50 0 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 50 0 200 400 600 800 VCE, Collector to Emitter Voltage (V) Minimum Switching Safe Operating Area
1000 Coes Cres 100
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.5 0.3 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 0.9 0.7
0.1 0.05 0 0.00001
Fmax, Operating Frequency (kHz)
120 100 80 60 40 20 0
Operating Frequency vs Collector Current VCE = 400V D = 50% RG = 5 TJ = 125C
20
40 60 80 100 IC, Collector Current (A)
120
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
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APTGF90DH60T - Rev 1 March 2004

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